Temperature dependence of resistive switching behaviors in resistive random access memory based on graphene oxide film.
Identifieur interne : 000028 ( Main/Exploration ); précédent : 000027; suivant : 000029Temperature dependence of resistive switching behaviors in resistive random access memory based on graphene oxide film.
Auteurs : RBID : pubmed:24739543Abstract
We reported resistive switching behaviors in the resistive random access memory (RRAM) devices based on the different annealing temperatures of graphene oxide (GO) film as active layers. It was found that the resistive switching characteristics of an indium tin oxide (ITO)/GO/Ag structure have a strong dependence on the annealing temperature of GO film. When the annealing temperature of the GO film was 20 °C, the devices showed typical write-once-read-many-times (WORM) type memory behaviors, which have good memory performance with a higher ON/OFF current ratio (∼10(4)), the higher the high resistance state (HRS)/low resistance state (LRS) ratio (∼10(5)) and stable retention characteristics (>10(3) s) under lower programming voltage (-1 V and -0.5 V). With the increasing annealing temperature of GO film, the resistive switching behavior of RRAM devices gradually weakened and eventually disappeared. This phenomenon could be understood by the different energy level distributions of the charge traps in GO film, and the different charge injection ability from the Ag electrode to GO film, which is caused by the different annealing temperatures of the GO film.
DOI: 10.1088/0957-4484/25/18/185202
PubMed: 24739543
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Temperature dependence of resistive switching behaviors in resistive random access memory based on graphene oxide film.</title><author><name sortKey="Yi, Mingdong" uniqKey="Yi M">Mingdong Yi</name><affiliation wicri:level="1"><nlm:affiliation>Center for Molecular Systems and Organic Devices (CMSOD), Key Laboratory for Organic Electronics & Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts &Telecommunications (NUPT), Nanjing 210 023, People's Republic of China.</nlm:affiliation><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Center for Molecular Systems and Organic Devices (CMSOD), Key Laboratory for Organic Electronics & Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts &Telecommunications (NUPT), Nanjing 210 023</wicri:regionArea></affiliation></author><author><name sortKey="Cao, Yong" uniqKey="Cao Y">Yong Cao</name></author><author><name sortKey="Ling, Haifeng" uniqKey="Ling H">Haifeng Ling</name></author><author><name sortKey="Du, Zhuzhu" uniqKey="Du Z">Zhuzhu Du</name></author><author><name sortKey="Wang, Laiyuan" uniqKey="Wang L">Laiyuan Wang</name></author><author><name sortKey="Yang, Tao" uniqKey="Yang T">Tao Yang</name></author><author><name sortKey="Fan, Quli" uniqKey="Fan Q">Quli Fan</name></author><author><name sortKey="Xie, Linghai" uniqKey="Xie L">Linghai Xie</name></author><author><name sortKey="Huang, Wei" uniqKey="Huang W">Wei Huang</name></author></titleStmt><publicationStmt><date when="2014">2014</date><idno type="doi">10.1088/0957-4484/25/18/185202</idno><idno type="RBID">pubmed:24739543</idno><idno type="pmid">24739543</idno><idno type="wicri:Area/Main/Corpus">000054</idno><idno type="wicri:Area/Main/Curation">000054</idno><idno type="wicri:Area/Main/Exploration">000028</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We reported resistive switching behaviors in the resistive random access memory (RRAM) devices based on the different annealing temperatures of graphene oxide (GO) film as active layers. It was found that the resistive switching characteristics of an indium tin oxide (ITO)/GO/Ag structure have a strong dependence on the annealing temperature of GO film. When the annealing temperature of the GO film was 20 °C, the devices showed typical write-once-read-many-times (WORM) type memory behaviors, which have good memory performance with a higher ON/OFF current ratio (∼10(4)), the higher the high resistance state (HRS)/low resistance state (LRS) ratio (∼10(5)) and stable retention characteristics (>10(3) s) under lower programming voltage (-1 V and -0.5 V). With the increasing annealing temperature of GO film, the resistive switching behavior of RRAM devices gradually weakened and eventually disappeared. This phenomenon could be understood by the different energy level distributions of the charge traps in GO film, and the different charge injection ability from the Ag electrode to GO film, which is caused by the different annealing temperatures of the GO film.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="In-Data-Review"><PMID Version="1">24739543</PMID><DateCreated><Year>2014</Year><Month>04</Month><Day>25</Day></DateCreated><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1361-6528</ISSN><JournalIssue CitedMedium="Internet"><Volume>25</Volume><Issue>18</Issue><PubDate><Year>2014</Year><Month>May</Month><Day>9</Day></PubDate></JournalIssue><Title>Nanotechnology</Title><ISOAbbreviation>Nanotechnology</ISOAbbreviation></Journal><ArticleTitle>Temperature dependence of resistive switching behaviors in resistive random access memory based on graphene oxide film.</ArticleTitle><Pagination><MedlinePgn>185202</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1088/0957-4484/25/18/185202</ELocationID><Abstract><AbstractText>We reported resistive switching behaviors in the resistive random access memory (RRAM) devices based on the different annealing temperatures of graphene oxide (GO) film as active layers. It was found that the resistive switching characteristics of an indium tin oxide (ITO)/GO/Ag structure have a strong dependence on the annealing temperature of GO film. When the annealing temperature of the GO film was 20 °C, the devices showed typical write-once-read-many-times (WORM) type memory behaviors, which have good memory performance with a higher ON/OFF current ratio (∼10(4)), the higher the high resistance state (HRS)/low resistance state (LRS) ratio (∼10(5)) and stable retention characteristics (>10(3) s) under lower programming voltage (-1 V and -0.5 V). With the increasing annealing temperature of GO film, the resistive switching behavior of RRAM devices gradually weakened and eventually disappeared. This phenomenon could be understood by the different energy level distributions of the charge traps in GO film, and the different charge injection ability from the Ag electrode to GO film, which is caused by the different annealing temperatures of the GO film.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Yi</LastName><ForeName>Mingdong</ForeName><Initials>M</Initials><Affiliation>Center for Molecular Systems and Organic Devices (CMSOD), Key Laboratory for Organic Electronics & Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts &Telecommunications (NUPT), Nanjing 210 023, People's Republic of China.</Affiliation></Author><Author ValidYN="Y"><LastName>Cao</LastName><ForeName>Yong</ForeName><Initials>Y</Initials></Author><Author ValidYN="Y"><LastName>Ling</LastName><ForeName>Haifeng</ForeName><Initials>H</Initials></Author><Author ValidYN="Y"><LastName>Du</LastName><ForeName>Zhuzhu</ForeName><Initials>Z</Initials></Author><Author ValidYN="Y"><LastName>Wang</LastName><ForeName>Laiyuan</ForeName><Initials>L</Initials></Author><Author ValidYN="Y"><LastName>Yang</LastName><ForeName>Tao</ForeName><Initials>T</Initials></Author><Author ValidYN="Y"><LastName>Fan</LastName><ForeName>Quli</ForeName><Initials>Q</Initials></Author><Author ValidYN="Y"><LastName>Xie</LastName><ForeName>Linghai</ForeName><Initials>L</Initials></Author><Author ValidYN="Y"><LastName>Huang</LastName><ForeName>Wei</ForeName><Initials>W</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2014</Year><Month>04</Month><Day>16</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Nanotechnology</MedlineTA><NlmUniqueID>101241272</NlmUniqueID><ISSNLinking>0957-4484</ISSNLinking></MedlineJournalInfo><CitationSubset>IM</CitationSubset></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2014</Year><Month>4</Month><Day>16</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2014</Year><Month>4</Month><Day>18</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2014</Year><Month>4</Month><Day>18</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2014</Year><Month>4</Month><Day>18</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1088/0957-4484/25/18/185202</ArticleId><ArticleId IdType="pubmed">24739543</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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